View IRGS4045DPBF_7331340.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

* qualification standards can be found at http://www.irf.com/ !" #$%#&$#&'%$% $(%"!) !" " base part number package type orderable part number form quantity IRGS4045DPBF d2pak tube 50 IRGS4045DPBF tape and reel left 800 irgs4045dtrlpbf tape and reel right 800 irgs4045dtrrpbf standard pack absolute maximum ratings parameter max. units v ces collector-to-emitter breakdown voltage v i c @ t c = 25c continuous collector current i c @ t c = 100c continuous collector current i cm pulsed collector current, v ge = 15v i lm clamped inductive load current, v ge = 20v a i f @t c =25c diode continuous forward current i f @t c =100c diode continuous forward current i fm diode maximum forward current continuous gate-to-emitter voltage v transient gate-to-emitter voltage p d @ t c =25 maximum power dissipation w p d @ t c =100 maximum power dissipation t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter min. typ. max. units r ? ??? ??? 1.9 r ? ??? ??? 6.3 r ? ? ??? ??? 40 c/w v ge 600 12 6.0 18 24 8.0 4.0 24 -55 to + 175 300 (0.063 in. (1.6mm) from case) 20 30 77 39
g c e gate colletor emitter d 2 -pak IRGS4045DPBF e g n-channel c features benefits high efficiency in a wide range of applications and switching frequencies square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability positive v ce(on) temperature coefficient and tighter distribution of parameters excellent current sharing in parallel operation 5 s short circuit soa enables short circuit protection scheme ultra fast soft recovery copak diode performance optimized for motor drive operation lead-free, rohs compliant environmentally friendly low v ce(on) and switching losses ? ?

?
? **'&#%+$
,% ? #,%$%- ? +

!" #$%#&$#&' %$% $(%"!) !" notes: v cc = 80% (v ces ), v ge = 15v, l = 1.0mh, r g = 47 ?? pulse width limited by max. junction temperature. ?

!
"

"!#

when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to applicati on note #an-994. maximum limits are based on statistical sample size characterization. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c =100 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.36 ? v/c v ge = 0v, i c = 250 a ( 25 -175 o c ) ?1.72.0 i c = 6.0a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 2.07 ? v i c = 6.0a, v ge = 15v, t j = 150c ?2.14? i c = 6.0a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 150 a ? v ge(th) / ? tj threshold voltage temp. coefficient ? -13 ? mv/c v ce = v ge , i c = 250 a ( 25 -175 o c ) gfe forward transconductance ? 5.8 ? s v ce = 25v, i c = 6.0a, pw =80 ? s i ces ??25 a v ge = 0v,v ce = 600v ??250 v ge = 0v, v ce = 600v, t j =175c v fm ?1.602.30 v i f = 6.0a ?1.30? i f = 6.0a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20 v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 13 19.5 i c = 6.0a q ge gate-to-emitter charge (turn-on) ? 3.1 4.65 nc v cc = 400v q gc gate-to-collector charge (turn-on) ? 6.4 9.6 v ge = 15v e on turn-on switching loss ? 56 86 i c = 6.0a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 122 143 jr g = 47 ? , l=1mh, l s = 150nh, t j = 25c e total total switching loss ? 178 229 e ner gy l o s s es i ncl ude tai l and di o de r evers e r eco ver y t d(on) turn-on delay time ? 27 35 i c = 6.0a, v cc = 400v t r rise time ? 11 15 ns r g = 47 ? , l=1mh, l s = 150nh t d(off) turn-off delay time ? 75 93 t j = 25c t f fall time ? 17 22 e on turn-on switching loss ? 140 ? i c = 6.0a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 189 ? j r g = 47 ? , l=1mh, l s = 150nh, t j = 175c e total total switching loss ? 329 ? e ner gy l o s s es i ncl ude tai l and di o de r evers e r eco ver y t d(on) turn-on delay time ? 26 ? i c = 6.0a, v cc = 400v t r rise time ? 12 ? ns r g = 47 ? , l=1mh, l s = 150nh t d(off) turn-off delay time ? 95 ? t j = 175c t f fall time ? 32 ? c ies input capacitance ? 350 ? v ge = 0v c oes output capacitance ? 29 ? v cc = 30v c res reverse transfer capacitance ? 10 ? f = 1mhz t j = 175c, i c = 24a rbsoa reverse bias safe operating area full square v cc = 500v, vp =600v r g = 100 ? , v ge = +20v to 0v v cc = 400v, vp =600v r g = 100 ? , v ge = +15v to 0v erec reverse recovery energy of the diode ? 178 ? jt j = 175 o c trr diode reverse recovery time ? 74 ? ns v cc = 400v, i f = 6.0a irr peak reverse recovery current ? 12 ? a v ge = 15v, rg = 47 ? , l=1mh, l s =150nh diode forward voltage drop collector-to-emitter leakage current scsoa short circuit safe operating area ? 5 s pf conditions ?
!" #$%#&$#&'%$% $(%"!) !" .
fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 4 - reverse bias soa t j = 175c, v ge = 20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s fig. 3 - forward soa, t c = 25c, t j ? 175c, v ge = 15v 0 20 40 60 80 100 120 140 160 180 t c (c) 0 10 20 30 40 50 60 70 80 p t o t ( w ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 2 4 6 8 10 12 14 i c ( a ) 10 100 1000 v ce (v) 0 1 10 100 i c a ) 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10 sec 100 sec tc = 25c tj = 175c single pulse dc 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v

!" #$%#&$#&' %$% $(%"!) !" / fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. diode forward characteristics tp = 80 s fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 11 - typical v ce vs. v ge t j = 175c 0.0 1.0 2.0 3.0 v f (v) 0 2 4 6 8 10 12 14 16 18 20 i f ( a ) -40c 25c 175c 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v 4 6 8 10121416 v ge, gate-to-emitter voltage (v) 0 2 4 6 8 10 12 14 16 18 20 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c
!" #$%#&$#&'%$% $(%"!) !" 0
fig. 13 - typ. energy loss vs. i c t j = 175c; l = 1mh; v ce = 400v, r g = 47 ? ; v ge = 15v. fig. 15 - typ. energy loss vs. r g t j = 175c; l = 1mh; v ce = 400v, i ce = 6.0a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l=1mh; v ce = 400v r g = 47 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l=1mh; v ce = 400v i ce = 6.0a; v ge = 15v fig. 17 - typical diode i rr vs. i f t j = 175c fig. 18 - typical diode i rr vs. r g t j = 175c; i f = 6.0a 02468101214 i c (a) 50 100 150 200 250 300 350 400 e n e r g y ( j ) e off e on 2 4 6 8 10 12 14 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 rg ( ? ) 60 80 100 120 140 160 180 200 220 e n e r g y ( j ) e off e on 0 25 50 75 100 125 r g ( ? ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 2 4 6 8 10 12 14 i f (a) 0 5 10 15 20 25 30 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 0 25 50 75 100 125 r g ( ?? 6 8 10 12 14 16 18 20 22 i r r ( a )

!" #$%#&$#&' %$% $(%"!) !" 1 fig. 20 - typical diode q rr v cc = 400v; v ge = 15v; t j = 175c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 6.0a; t j = 175c fig. 24 - typical gate charge vs. v ge i ce = 6.0a, l=600 h fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 22 - typ. v ge vs. short circuit time v cc =400v, t c =25c fig. 21 - typical diode e rr vs. i f t j = 175c 0 100 200 300 400 500 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0 200 400 600 800 1000 1200 di f /dt (a/ s) 6 8 10 12 14 16 18 20 i r r ( a ) 2 4 6 8 10 12 14 i f (a) 50 100 150 200 250 300 350 e n e r g y ( j ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 8 1012141618 v ge (v) 0 5 10 15 20 t i m e ( s ) 10 20 30 40 50 c u r r e n t ( a ) t sc i sc 0 2 4 6 8 10 12 14 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 0 500 1000 1500 di f /dt (a/ s) 200 400 600 800 1000 1200 q r r ( n c ) 10 ? 22 ? 100 ? 47 ? 6.0a 12a 3.0a
!" #$%#&$#&'%$% $(%"!) !" 2
fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.0301 0.000004 0.7200 0.000067 0.7005 0.000898 0.4479 0.005416 fig. 26. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.2056 0.000019 1.4132 0.000095 3.3583 0.001204 1.8245 0.009127

!" #$%#&$#&' %$% $(%"!) !" 3 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit l rg 80 v dut 480v + - fig.c.t.5 - resistive load circuit fig.c.t.6 - typical filter circuit for v (br)ces measurement
!" #$%#&$#&'%$% $(%"!) !" 4
fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 wf.3- typ. diode recovery waveform @ t j = 175c using ct.4 wf.4- typ. short circuit waveform @ t j = 25c using ct.3 0 50 100 150 200 250 300 350 400 450 500 -2-1012345678 time (us) vce (v) -20 -10 0 10 20 30 40 50 60 70 80 v ce i ce -600 -500 -400 -300 -200 -100 0 100 -0.05 0.05 0.15 0.25 time (s) v f (v) -20 -15 -10 -5 0 5 10 15 pea k i rr t rr q rr 10% pea k irr -100 0 100 200 300 400 500 600 -0.2 0 0.2 0.4 0.6 0.8 1 time(s) v ce (v) -2 0 2 4 6 8 10 12 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 4.3 4.5 4.7 time (s) v ce (v) -5 0 5 10 15 20 25 30 test current 90% test current 5% v ce 10% test current tr eon loss

!" #$%#&$#&' %$% $(%"!) !" "!

!
"

!" #$%#&$#&'%$% $(%"!) !" ""

dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

!" #$%#&$#&' %$% $(%"!) !" " ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 5 67&'&$#-$ &8-&#(%7#8&$#$%#&$#&'%$%9-%(-$%: ;$$*:<< <*87$=#<%'&('$>< 55?;%@7&'&$#&$#?-&>(%&,&'&('%-;7'8$;%7-%;&,%-7;%@7%%#$-'%&-%#$&$>7 #$%#&$#&'%$%-&'%-%*%-%#$&$,%7$;%#&$#:;$$*:<;$=&''<-&'%-%*< 555 **'&('%,%-#a
-$&8&$$;%$%*87$%'%&-% msl1 (per jedec j-std-020d) ??? rohs compliant yes d2pak aec-q101-002 human body model class h1a (+/- 500v) ??? aec-q101-001 charged device model class c5 (+/- 1000v) ??? qualification information ? qualification level industrial ?? (per jedec jesd47f) ??? moisture sensitivity level aec-q101-005 esd machine model class m2 (+/- 200v) ???

▲Up To Search▲

Price & Availability of IRGS4045DPBF

	To Download IRGS4045DPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .